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CAS:1373954-06-3 | Di-n-butylammonium Dimethylammonium Lead(II) Decaiodide

CAS:1373954-06-3 | Di-n-butylammonium Dimethylammonium Lead(II) Decaiodide

CAS Number:1373954-06-3
Linear Formula:(C4H9NH3)2(CH3NH3)2Pb3I10
Package:1g,25g,100g,1kg,25kg,100kg;
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Made in China

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Product Introduction

Introduction and application of CAS:1373954-06-3 | di-n-butylammonium dimethylammonium lead(II) decaiodide

  • 2D perovskites have been used as the active material in may applications such as light emmiting diodes, phototransistors, and solar cells.Unlike 3D perovskites, these layered materials give higher moisture stability and longer device lifetimes.

     

  • Di-n-butylammonium dimethylammonium lead(II) decaiodide can be used as a component in the fabrication of perovskite materials for solar cells. It can be used in the research and development of optoelectronic devices such as solar cells, light-emitting diodes (LEDs), photodetectors and lasers.

 

Specification of CAS:1373954-06-3 | di-n-butylammonium dimethylammonium lead(II) decaiodide

Form Crystals
Quality Level

100

 

Package and transportation of CAS:1373954-06-3 | di-n-butylammonium dimethylammonium lead(II) decaiodide

product-800-705

 

Related articles of CAS:1373954-06-3 | di-n-butylammonium dimethylammonium lead(II) decaiodide

Perovskite energy funnels for efficient light-emitting diodes.
Mingjian Yuan et al.
Nature nanotechnology, 11(10), 872-877 (2016-06-28)
Organometal halide perovskites exhibit large bulk crystal domain sizes, rare traps, excellent mobilities and carriers that are free at room temperature-properties that support their excellent performance in charge-separating devices. In devices that rely on the forward injection of electrons and

 

2D Homologous Perovskites as Light-Absorbing Materials for Solar Cell Applications.
Duyen H Cao et al.
Journal of the American Chemical Society, 137(24), 7843-7850 (2015-05-29)
We report on the fabrication and properties of the semiconducting 2D (CH3(CH2)3NH3)2(CH3NH3)(n-1)Pb(n)I(3n+1) (n = 1, 2, 3, and 4) perovskite thin films. The band gaps of the series decrease with increasing n values, from 2.24 eV (CH3(CH2)3NH3)2PbI4 (n = 1)

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